Silicon nitride possesses numerous superior properties, including high hardness, high strength, low coefficient of thermal expansion, good oxidation resistance, good hot corrosion resistance, low coefficient of friction, low high-temperature creep, and similarity to lubricated metal surfaces, making it the structural ceramic material with the best overall performance. Compared with other ceramic materials, silicon nitride ceramic materials have significant advantages, especially in terms of high-temperature resistance, chemical inertness to metals, and extremely high hardness and fracture toughness.
Ceramic substrates are used in semiconductor packaging in the form of copper-clad ceramic laminates. The excellent mechanical properties of silicon nitride ceramic substrates allow for the coating of thicker layers of metallic copper. Furthermore, silicon nitride ceramic copper-clad laminates also offer better amperage capacity. Therefore, silicon nitride ceramics are the semiconductor insulating substrate material that best combines heat dissipation, reliability, and electrical performance.
Global semiconductor device technology is developing towards higher voltages, larger currents, and greater power densities. Silicon nitride ceramic substrates are the best-performing substrate material, combining high thermal conductivity and high reliability. Currently, silicon nitride ceramic substrate products are used in the hybrid electric vehicle/pure electric vehicle market. (Excerpt from New Materials Industry).
Silicon nitride ceramic substrate (Si3N4)
In 1996, the company introduced the complete amorphous core design and manufacturing technology from Hitachi Material (an American amorphous materials manufacturer) and GE. Under the technical guidance of GE, the company produces high-quality amorphous transformers.
Amorphous core transformer
